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| PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800HA-66H q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 570.25 4 - M8 NUTS 20 E C C 1240.25 140 40 C E G C CM E E C E G CIRCUIT DIAGRAM 3 - M4 NUTS 10.35 10.65 48.8 61.5 18 6 - 7 MOUNTING HOLES 15 40 5.2 38 28 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 Aug.1998 30 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 3300 20 800 1600 800 1600 6940 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 8.24 2.84 ~ 3.43 0.88 ~ 1.08 1.5 Unit V V A A A A W C C V N*m N*m N*m kg (Note 2) (Note 2) Main terminal to Base, AC for 1 minute Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 1) trr (Note 1) Qrr (Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Parameter Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Test conditions VCE = VCES, VGE = 0V IC = 80mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 3.75 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s IGBT part FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 4.40 4.80 86 5 2 6.7 -- -- -- -- 3.30 -- 200 -- -- 0.008 Max 10 7.5 0.5 5.72 -- -- -- -- -- 1.60 2.00 2.50 1.00 4.29 1.20 -- 0.018 0.036 -- Unit mA V A V nF nF nF C s s s s V s C C/W C/W C/W (Note 4) IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj=25C COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1600 VCE=10V 1400 1200 1000 800 600 400 200 0 0 1 2 3 4 5 6 VGE=13V VGE=14V VGE=15V VGE=20V VGE=12V VGE=11V 1400 1200 1000 800 600 400 200 0 0 2 4 6 Tj = 25C Tj = 125C 8 10 12 14 16 18 20 VGE=10V VGE=9V VGE=8V VGE=7V 7 8 9 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 Tj=25C 8 VGE=15V 6 EMITTER CURRENT IE (A) 4 2 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 COLLECTOR CURRENT IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Aug.1998 |
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